We show that the new generation of high resolution transmission electron microscopes allows the lattice imaging of semiconductors in at least four crystallographic orientations and present the first atomic structure images of Si, both in the 〈100〉 and 〈111〉 orientations. We demonstrate the ability to lattice image along different orientations such as 〈111〉 and 〈112〉 by tilting between them. Thus, the potential exists to obtain three-dimensional maps of atom positions around individual features of interest such as defects and interfaces.