Reversibility of trapped hole annealing
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6), 1186-1191
- https://doi.org/10.1109/23.25437
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Hole Removal in Thin-Gate MOSFETs by TunnelingIEEE Transactions on Nuclear Science, 1985
- Defect Production in SiO2 by X-Ray and Co-60 RadiationsIEEE Transactions on Nuclear Science, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degKIEEE Transactions on Nuclear Science, 1984
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Hole traps in silicon dioxideJournal of Applied Physics, 1976
- Rapid annealing and charge injection in Al2O3 MIS capacitorsIEEE Transactions on Nuclear Science, 1974
- Stoichiometry of thin silicon oxide layers on siliconApplied Physics Letters, 1974
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974