In Situ Heating Device for Real Time X-Ray Topography on Crystal Growth from the Melt
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A), L632-634
- https://doi.org/10.1143/jjap.23.l632
Abstract
To study the melting and solidification process of a metallic crystal, an in situ heating device for real time X-ray topography has been newly developed and used for the case of a pure aluminium single crystal. Solid-liquid interface remains macroscopically flat and facet growth is not seen. The perfection of slowly grown crystal is better than that of rather rapidly grown one.Keywords
This publication has 2 references indexed in Scilit:
- Melting of silicon crystals and a possible origin of swirl defectsJournal of Crystal Growth, 1977
- Technique for the video display of X-ray topographic images and its application to the study of crystal growthJournal of Crystal Growth, 1974