Doping of ZnTe by molecular beam epitaxy
- 4 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (14), 1848-1849
- https://doi.org/10.1063/1.111775
Abstract
We have grown Cl-doped ZnTe under different growth conditions and N-doped ZnTe on different orientations. n-type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p-type doping level of 1×1020 cm−3, which is the highest reported, was obtained by substrate tilting. These phenomena can be analyzed by the surface bonding structure analogous to the impurity concentration in the III-V compound semiconductors.This publication has 12 references indexed in Scilit:
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