Optical band gap of the ternary semiconductor Si1−x−yGexCy

Abstract

Single‐crystal alloys of diamond with Si and Ge are investigated theoretically. An indirect band gap Γ^v_25’ → Δ^c₁ is found for the new semiconductor Si_1−x−yGe_xC_y over most compositions x and y, with an indirect Γ^v_25’ → L^c₁ gap found for the remaining compositions. The estimated band gaps span the 0.62–5.5‐eV‐range. Predictions are made for band gap versus lattice parameter in the new alloy semiconductors Si_1−xC_x and Ge_1−xC_x.