Abruptness of GaAs/AlInP hetero-interfaces grown by GS-MBE
- 2 May 1991
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 111 (1-4), 521-524
- https://doi.org/10.1016/0022-0248(91)91032-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Growth of (AlIn)P/GaAs single quantum well structure on (001) GaAs by gas source MBE using AsH3 and PH3 gasJournal of Crystal Growth, 1989
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983