Electron-Hole Scattering and the Electrical Resistivity of the SemimetalTiS2

Abstract

We present the first complete theory of the effect of collisions between charge carriers on the electrical resistivity of a simple degenerate semimetal. We find that (i) electron-hole scattering can explain the anomalous $T^2$ resistivity of stoichiometric ${\mathrm{TiS}}_2$, (ii) elsetron-electron and hole-hole scattering do not contribute to $\rho$, and (iii) the theory of electron-hole scattering predicts that the resistivity of nonstoichiometric ${\mathrm{TiS}}_2$ should fall significantly below $T^2$ at high temperatures.