Weave Patterned Organic Transistors on Fiber for E-Textiles
- 24 January 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 52 (2), 269-275
- https://doi.org/10.1109/ted.2004.841331
Abstract
Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of >0.5 cm/sup 2//V-s measured at 20 V V/sub DD/ and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.Keywords
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