Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001)
- 1 July 2014
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 307, 414-427
- https://doi.org/10.1016/j.apsusc.2014.04.048
Abstract
No abstract availableKeywords
Funding Information
- National Key Basic Research Program of China – 973 Program (2011CB013102)
- National Natural Science Foundation of China (91223202)
- International Science & Technology Cooperation Program of China (2011DFA73410)
This publication has 40 references indexed in Scilit:
- Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarizationApplied Surface Science, 2013
- The influence of abrasive particle size in copper chemical mechanical planarizationSurface and Coatings Technology, 2013
- Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materialsCurrent Applied Physics, 2012
- Preparation of silica/ceria nano composite abrasive and its CMP behavior on hard disk substrateMicroelectronic Engineering, 2010
- Effect of abrasive particle concentration on preliminary chemical mechanical polishing of glass substrateMicroelectronic Engineering, 2010
- Mechanical effect of process condition and abrasive concentration on material removal rate profile in copper chemical mechanical planarizationJournal of the American Academy of Dermatology, 2009
- High Throughput SiC Wafer Polishing with Good Surface MorphologyMaterials Science Forum, 2007
- Chemical mechanical polishing performances by filtering and retreatment of used silica abrasives slurryMicroelectronic Engineering, 2005
- Oxide-chemical mechanical polishing characteristics using silica slurry retreated by mixing of original and used slurryMicroelectronic Engineering, 2005
- Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC SubstratesMaterials Science Forum, 2004