Quantum Confinement and Electronic Properties of Silicon Nanowires
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- 11 June 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (23), 236805
- https://doi.org/10.1103/physrevlett.92.236805
Abstract
We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d<2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis.Keywords
This publication has 22 references indexed in Scilit:
- What is the Ground-State Structure of the Thinnest Si Nanowires?Physical Review Letters, 2003
- Metal-Semiconductor Nanocontacts: Silicon NanowiresPhysical Review Letters, 2000
- Control of Thickness and Orientation of Solution-Grown Silicon NanowiresScience, 2000
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Quantum confinement effect in thin quantum wiresPhysical Review B, 1997
- First-principles analysis of electronic states in silicon nanoscale quantum wiresPhysical Review B, 1993
- Optical properties of porous silicon: A first-principles studyPhysical Review Letters, 1992
- Theory of optical properties of quantum wires in porous siliconPhysical Review B, 1992
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energiesPhysical Review B, 1986