Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors

Abstract

This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at $1550°\text{C}$ in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of $\sim 100{\text{cm}}^2/\text{V-s}$ , and negligible influence of resistance at the contacts.