Cd2SnO4, CdIn2O4, and Cd2GeO4 as anodes for the photoelectrolysis of water
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (3), 320-322
- https://doi.org/10.1063/1.91921
Abstract
From their photoelectrolysis spectra we have determined the lowest band gaps of Cd2SnO4, CdIn2O4, and Cd2GeO4 to be 2.12 (indirect), 2.23 (forbidden), and 3.15 eV (indirect), respectively; their flat‐band potentials are +0.18, +0.25, and −0.82 V (SCE), respectively. This combination of band gaps and flat‐band potentials, and the observed long‐term instability of Cd2SnO4, makes these materials unsuitable as electrodes in solar photoelectrolysis cells.Keywords
This publication has 9 references indexed in Scilit:
- Interband transitions of semiconducting oxides determined from photoelectrolysis spectraSolid State Communications, 1979
- Photoelectrochemistry: Applications to Solar Energy ConversionAnnual Review of Physical Chemistry, 1978
- Optical-absorption edge in cadmium stannate selective coatingsJournal of Applied Physics, 1978
- Semiconductors for PhotoelectrolysisAnnual Review of Materials Science, 1978
- Prediction of Flatband Potentials at Semiconductor‐Electrolyte Interfaces from Atomic ElectronegativitiesJournal of the Electrochemical Society, 1978
- Semiconducting oxide anodes in photoassisted electrolysis of waterJournal of Applied Physics, 1977
- Photoelectrolysis and physical properties of the semiconducting electrode WO2Journal of Applied Physics, 1977
- Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4Journal of Physics and Chemistry of Solids, 1977
- The crystal structure of cadmium indateActa Crystallographica, 1959