Monolithic Metal Oxide Transistors
- 20 March 2015
- journal article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 9 (4), 4288-4295
- https://doi.org/10.1021/acsnano.5b00700
Abstract
We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.Keywords
Funding Information
- National Research Foundation of Korea (2009-0083540, 2013M3A6A5073177, 2014R1A2A2A01006628, 2014R1A4A1008474)
This publication has 41 references indexed in Scilit:
- A High Mobility P‐Type DPP‐Thieno[3,2‐b]thiophene Copolymer for Organic Thin‐Film TransistorsAdvanced Materials, 2010
- Organic Transistors in Optical Displays and Microelectronic ApplicationsAdvanced Materials, 2010
- Materials and Applications for Large Area Electronics: Solution-Based ApproachesChemical Reviews, 2010
- High-Performance Thin-Film Transistors from Solution-Processed Dithienothiophene Polymer Semiconductor NanoparticlesChemistry of Materials, 2008
- Low-Temperature, Solution-Processed, High-Mobility Polymer Semiconductors for Thin-Film TransistorsJournal of the American Chemical Society, 2007
- Patterning organic single-crystal transistor arraysNature, 2006
- Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl AnthradithiopheneAdvanced Materials, 2006
- Device Physics of Solution‐Processed Organic Field‐Effect TransistorsAdvanced Materials, 2005
- Flexible active-matrix displays and shift registers based on solution-processed organic transistorsNature Materials, 2004
- High-Performance, Solution-Processed Organic Thin Film Transistors from a Novel Pentacene PrecursorJournal of the American Chemical Society, 2002