Enhanced photoelectrochemical solar-energy conversion by gallium arsenide surface modification
- 15 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (6), 521-523
- https://doi.org/10.1063/1.90422
Abstract
In the n‐GaAs/Se=–Se=x–OH−/C liquid junction solar cell, modification of the semiconductor surface by incorporation of ruthenium increases both the fill factor and the open‐circuit voltage and improves the reproducibility of performance. The power conversion efficiency of the modified cell is 12% under ∼100 mW/cm2 sunlight. Surface metal atoms or ions are shown to alter GaAs cell behavior widely; Ru represents a case for which the effect on cell performance is both positive and persisting.Keywords
This publication has 5 references indexed in Scilit:
- Photocurrent spectroscopy of semiconductor electrodes in liquid junction solar cellsJournal of the American Chemical Society, 1978
- Solar Conversion Efficiency of Pressure Sintered Cadmium Selenide Liquid Junction CellsJournal of the Electrochemical Society, 1977
- Electrolytic Deposition of Thin Metal Films on Semiconductor SubstratesJournal of the Electrochemical Society, 1977
- Stable Semiconductor Liquid Junction Cell with 9 Percent Solar-to-Electrical Conversion EfficiencyScience, 1977
- Spectral Response and Efficiency Relations in Semiconductor Liquid Junction Solar CellsJournal of the Electrochemical Society, 1977