Patterning Sub-50 nm features with near-field embedded-amplitude masks
- 12 August 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (7), 1315-1317
- https://doi.org/10.1063/1.1495538
Abstract
Sub-50 nm lines, holes, and posts have been patterned photolithographically using near-field embedded-amplitude masks and an exposing wavelength of 220 nm generated by an arc-lamp source. Interference in the optical near field is utilized to produce the fine patterns. In some cases, the feature sizes on the mask are more than six times larger than the size of the smallest features patterned on the substrate. Numerical simulations support the experimental results.Keywords
This publication has 11 references indexed in Scilit:
- Contrast mechanisms in high-resolution contact lithography: A comparative studyMicroelectronic Engineering, 2001
- Numerical feasibility study of the fabrication of subwavelength structure by mask lithographyJournal of the Optical Society of America A, 2001
- Evanescent interferometric lithographyApplied Optics, 2001
- Patterning 100 nm features using deep-ultraviolet contact photolithographyApplied Physics Letters, 2000
- Sub-diffraction-limited patterning using evanescent near-field optical lithographyApplied Physics Letters, 1999
- Light-coupling masks for lensless, sub-wavelength optical lithographyApplied Physics Letters, 1998
- Imaging the irradiance distribution in the optical near fieldApplied Physics Letters, 1997
- Imprint of sub-25 nm vias and trenches in polymersApplied Physics Letters, 1995
- Characterization of near-field holography grating masks for optoelectronics fabricated by electron beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Method for Fabricating High Frequency Surface Wave TransducersReview of Scientific Instruments, 1969