One-gate-wide CMOS Inverter on laser-recrystallized polysilicon

1 June 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (6), 117-118
https://doi.org/10.1109/edl.1980.25252

Abstract

A CMOS inverter having a single gate for both n and p channel devices has been fabricated using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n channel device. The fabrication details and dc electrical performance of this device are described.

Keywords

INVERTERS
SILICON
SEMICONDUCTOR FILMS
FABRICATION
CHEMICAL VAPOR DEPOSITION
ARGON
OPTICAL MATERIALS
OXIDATION
SUBSTRATES
CRYSTALLIZATION

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