Molecular Wires, Switches, and Memories

Abstract

Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through‐bond electronic transport properties of nanoscale metal‐1,4‐phenylene diisocyanide‐metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide‐Pd showing the lowest thermionic barrier of 0.22 eV; robust and large reversible switching behavior in an electronic device that utilizes molecules containing redox centers as the active component, exhibiting negative differential resistance (NDR) and large on‐off peak‐to‐valley ratio (PVR) are realized; erasable storage of higher conductivity states in these redox‐center‐containing molecular devices are observed; and a two‐terminal electronically programmable and erasable molecular memory cell with long bit retention time is demonstrated.