GaAs/AlxGa1-xAs Multilayer Reflector for Surface Emitting Laser Diode
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A), L112
- https://doi.org/10.1143/jjap.22.l112
Abstract
GaAs/Al x Ga1-x As multilayer reflectors (MLRs) were fabricated for the cavity mirrors of a surface emitting laser diode by using MBE technique. Absolute reflectivity of the fabricated MLR with 20 repetition pairs of GaAs–Al0.5Ga0.5As reaches 0.94. This means 18 times lower cavity loss than GaAs-air interface when used as cavity mirrors. Good agreement of the reflectivity between theory and experiments is demonstrated.Keywords
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