Electronic Structure of Amorphous Semiconductors

Abstract

The Fermi energy as a function of electronic density and temperature is calculated for a defect level in which the effective intrasite electronic correlation energy is negative. It is found that the Fermi level lies below the energy of the highest-filled quasiparticle state, even at $T=0\mathrm{}$, a result which favors $p$-type conduction. Futhermore, the Fermi energy varies only very slowly with electronic density and temperature, and thus is effectively pinned.