Temperature dependence of photoreflectance line shapes in GaAsAlGaAs multiple quantum wells
- 31 December 1987
- journal article
- Published by Elsevier BV in Superlattices and Microstructures
- Vol. 3 (3), 235-238
- https://doi.org/10.1016/0749-6036(87)90064-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theoryApplied Physics Letters, 1986
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Third-derivative modulation spectroscopy with low-field electroreflectanceSurface Science, 1973
- Resonant Nonlinear Optical Susceptibility: Electroreflectance in the Low-Field LimitPhysical Review B, 1972
- Band-Structure Analysis from Electro-Reflectance StudiesPhysical Review B, 1966
- Theory of Line-Shapes of the Exciton Absorption BandsProgress of Theoretical Physics, 1958