Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
- 1 May 2010
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 518 (14), 3992-3998
- https://doi.org/10.1016/j.tsf.2009.12.010
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistorApplied Physics Letters, 2009
- Inorganic Semiconductors for Flexible ElectronicsAdvanced Materials, 2007
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Transparent ring oscillator based on indium gallium oxide thin-film transistorsSolid-State Electronics, 2006
- Organic Acid Mixing to Improve ITO Film Etching in Flat Panel Display ManufacturingJournal of the Electrochemical Society, 2006
- Properties of indium zinc oxide thin films on heat withstanding plastic substrateJournal of Vacuum Science & Technology A, 2004
- Optimization and Properties of Zn Doped Indium Oxide Films on Plastic SubstrateJapanese Journal of Applied Physics, 2004
- Patterning Indium Tin Oxide and Indium Zinc Oxide Using Microcontact Printing and Wet EtchingLangmuir, 2001
- On the Mechanism of ITO Etching: The Specificity of Halogen AcidsJournal of the Electrochemical Society, 1993
- Reductive Corrosion of ITO in Contact with Al in Alkaline SolutionsJournal of the Electrochemical Society, 1992