Variations in I–V characteristics of oxide semiconductors induced by oxidizing gases
- 30 September 1996
- journal article
- Published by Elsevier BV in Sensors and Actuators B: Chemical
- Vol. 35 (1-3), 62-67
- https://doi.org/10.1016/s0925-4005(96)02015-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hydrogen-sensitive breakdown voltage in the I–V characteristics of tin dioxide-based semiconductorsSensors and Actuators B: Chemical, 1996
- Zinc Oxide Varistor Gas Sensors: I, Effect of Bi2O3 Content on the H2‐Sensing PropertiesJournal of the American Ceramic Society, 1995
- Hydrogen-sensing mechanism of zinc oxide varistor gas sensorsSensors and Actuators B: Chemical, 1995
- Preparation and H2 Sensing Properties of ZnO Varistor Gas SensorsDenki Kagaku oyobi Kogyo Butsuri Kagaku, 1993
- Thin-film In-doped V-catalysed SnO2 gas sensorsSensors and Actuators B: Chemical, 1992
- Tungsten Oxide-Based Semiconductor Sensor Highly Sensitive to NO and NO2Chemistry Letters, 1991