Lattice distortions for arsenic in single-crystal silicon
- 15 July 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (2), 1392-1394
- https://doi.org/10.1103/physrevb.34.1392
Abstract
Extended x-ray-absorption fine-structure measurements for 0.1, 0.7, and 7 at.% arsenic impurities in single-crystal silicon yield As-to-Si nearest-neighbor distances of 2.41 ± 0.02 Å, which are 0.06 Å (2.5%) greater than the Si-to-Si distance in pure silicon. Next-nearest-neighbor distances are 3.85 ± 0.02 Å, only 0.01 Å (0.3%) greater than the corresponding Si-to-Si distance.Keywords
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