Scalable Cell Technology Utilizing Domain Wall Motion for High-speed MRAM

Abstract

We propose a new MRAM cell that stores data in the form of the domain wall (DW) position. The DW is moved by the spin-polarized current that flows in the free layer. The cell was fabricated and the writing characteristics were investigated. A writing current of the cell was scalable, and the current density was reduced by using a new material. The cell is suitable for a high-speed MRAM that will compete with an eSRAM.