Irradiated Silicon Gate MOS Device Bias Annealing
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6), 4100-4104
- https://doi.org/10.1109/tns.1983.4333089
Abstract
N-channel silicon gate MOS transistors exhibit positive threshold shifts when bias annealed following ionizing irradiation exposure. The threshold shift is probably due to electrons tunneling into the oxide and recombining at trapping centers near the Si/Sio2 interface. The threshold shifts are large enough in some cases to cause functional failures of MOS integrated circuits.Keywords
This publication has 7 references indexed in Scilit:
- On models of phosphorus diffusion in siliconJournal of Applied Physics, 1983
- The Effects of Test Conditions on MOS Radiation-Hardness ResultsIEEE Transactions on Nuclear Science, 1981
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Two-stage process for buildup of radiation-induced interface statesJournal of Applied Physics, 1979
- INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACEPublished by Elsevier BV ,1978
- Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiationApplied Physics Letters, 1976
- Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS CapacitorsIEEE Transactions on Nuclear Science, 1976