Chemical Mechanical Polishing and a Succedent Reactive Ion Etching Processing of Sapphire Wafer
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 154 (3), H166-H169
- https://doi.org/10.1149/1.2424417
Abstract
We report on the use of mixed abrasives slurries (MAS) containing boron carbide and ceria abrasives for chemical mechanical polishing of sapphire wafer. Possible MAS configuration theory was presented, on the basis of which a material removal rate as high as 180nm∕min180nm∕min and good surface with a root mean square (rms) of 2.1nm2.1nm were achieved. Through a succedent reactive ion etching process, we further improved the sapphire surface quality to an rms of 0.7nm0.7nm , which showed a finely global planarization of the wafer had been achieved.Keywords
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