High-mobility spin-cast organic thin film transistors

Abstract

We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm 2 ∕ V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Auelectrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.