Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
- 1 June 2015
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The ION/IOFF benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices.Keywords
This publication has 1 reference indexed in Scilit:
- Germanium p-Channel FinFET Fabricated by Aspect Ratio TrappingIEEE Transactions on Electron Devices, 2014