Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory
- 17 November 2008
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 18 (22), 3678-3685
- https://doi.org/10.1002/adfm.200800378
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Nonvolatile Memory Elements Based on Organic MaterialsAdvanced Materials, 2007
- Organic Donor–Acceptor System Exhibiting Electrical Bistability for Use in Memory DevicesAdvanced Materials, 2005
- Polyaniline Nanofiber/Gold Nanoparticle Nonvolatile MemoryNano Letters, 2005
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- Organic Thin-Film MemoryMRS Bulletin, 2004
- High-Performance Emerging Solid-State Memory TechnologiesMRS Bulletin, 2004
- All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate InsulatorAdvanced Materials, 2004
- The path to ubiquitous and low-cost organic electronic appliances on plasticNature, 2004
- A polymer/semiconductor write-once read-many-times memoryNature, 2003
- Nonvolatile electrical bistability of organic/metal-nanocluster/organic systemApplied Physics Letters, 2003