Determination of SEU parameters of NMOS and CMOS SRAMs
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6), 1463-1470
- https://doi.org/10.1109/23.124133
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Modeling charge collection and single event upsets in microelectronicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Comparison of the charge collecting properties of junctions and the SEU response of microelectronic circuitsInternational Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements, 1991
- SEU test techniques for 256 K static RAMs and comparisons of upsets by heavy ions and protonsIEEE Transactions on Nuclear Science, 1988