High performance foldable polymer thin film transistors with a side gate architecture
- 24 October 2011
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 21 (46), 18804-18809
- https://doi.org/10.1039/c1jm13079j
Abstract
Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.Keywords
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