Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
- 30 September 1998
- journal article
- Published by Elsevier BV in Materials Science and Engineering: A
- Vol. 253 (1-2), 269-274
- https://doi.org/10.1016/s0921-5093(98)00735-7
Abstract
No abstract availableKeywords
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