Design of a Voltage‐Controlled Magnetic Random Access Memory Based on Anisotropic Magnetoresistance in a Single Magnetic Layer
- 30 April 2012
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 24 (21), 2869-2873
- https://doi.org/10.1002/adma.201201004
Abstract
A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.Keywords
This publication has 36 references indexed in Scilit:
- High-density magnetoresistive random access memory operating at ultralow voltage at room temperatureNature Communications, 2011
- Pattern Transfer and Electric‐Field‐Induced Magnetic Domain Formation in Multiferroic HeterostructuresAdvanced Materials, 2011
- Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin FilmsAdvanced Materials, 2011
- Electric-field-induced magnetic easy-axis reorientation in ferromagnetic/ferroelectric layered heterostructuresPhysical Review B, 2009
- Giant Electric Field Tuning of Magnetism in Novel Multiferroic FeGaB/Lead Zinc Niobate–Lead Titanate (PZN‐PT) HeterostructuresAdvanced Materials, 2009
- Strong enhancement of the direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructuresPhysical Review B, 2009
- Towards a magnetoelectric memoryNature Materials, 2008
- Phase‐Field Method of Phase Transitions/Domain Structures in Ferroelectric Thin Films: A ReviewJournal of the American Ceramic Society, 2008
- A room-temperature electrical field–controlled magnetic memory cellJournal of Materials Research, 2007
- Applications of semi-implicit Fourier-spectral method to phase field equationsComputer Physics Communications, 1998