Hot phonons and instabilities in GaAs/GaAlAs structures
- 1 December 1989
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 32 (12), 1641-1646
- https://doi.org/10.1016/0038-1101(89)90287-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Role of level-broadening in resonant tunnelling of electrons through double-barrier heterostructuresSuperlattices and Microstructures, 1989
- A study of photovoltage in GaAs-AlGaAs multiple quantum well materialSemiconductor Science and Technology, 1988
- On the analytical approach to the real space electron transfer in GaAsAlGaAs heterostructuresSolid-State Electronics, 1988
- Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructuresSolid-State Electronics, 1988
- The effect of random doping fluctuations on the Fermi level in a semiconductorSemiconductor Science and Technology, 1988
- Statistically screened impurity scattering in modulation-doped structuresSemiconductor Science and Technology, 1988
- Nonequilibrium electron-phonon scattering in semiconductor heterojunctionsPhysical Review B, 1986
- Spectroscopy of hot carriers in semiconductorsJournal of Luminescence, 1986
- Demonstration of a new oscillator based on real-space transfer in heterojunctionsApplied Physics Letters, 1982
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layersApplied Physics Letters, 1981