Writing and reading bit arrays for information storage using conductance change of a Langmuir–Blodgett film induced by scanning tunneling microscopy

Abstract

We demonstrate writing and reading bit arrays for information storage using an atomic force microscope with an electrically conducting probe and a medium consisting of a polyimide Langmuir–Blodgett film. In this system, data bits of 10 nm in diameter were written by application of voltage pulses with the conducting probe, and were read out by detecting the change in current. Topographical change was hardly observed at the data bits. A bit array of about ${10}^3$ bits which contained information such as binary encoded characters was written and was successfully read out. The way to write and read the data bits with higher rate is discussed.