GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23), 1986-1987
- https://doi.org/10.1049/el:19971312
Abstract
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500–550 in the current injection range of 20–65 A/cm2 at 5–7.5 volts.Keywords
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