Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing
- 11 December 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (1), 92-96
- https://doi.org/10.1109/ted.2012.2228006
Abstract
To reduce the power consumption and improve the device performance in scaled CMOS integrated circuits, transistors with steep subthreshold swing (SS) is highly desirable. The tunnel field-effect transistor (TFET) based on the band-to-band tunneling has been suggested as a replacement to conventional MOSFETs. In order to improve the device performance of TFET, enhanced carrier transport across the tunneling junction is crucial. In this paper, source-pocket Si TFET is presented and successfully fabricated by laser annealing. This TFET has enhanced lateral electric field across the source tunneling junction, resulting in a reduction of tunneling distance. The experimental data of the proposed paper, for the first time, shows steep SS (46 mV/dec at 1 pA/μm), excellent ION/IOFF ratio ( <; 107), and improved output characteristics at T = 300 K due to the dramatic reduction of the tunneling resistance. Compared with other TFET works, the proposed method is efficient to improve the device performance on TFET.Keywords
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