Material gain of bulk 1.55 μm InGaAsP/InP semiconductor optical amplifiers approximated by a polynomial model

Abstract

We report material gain measurements of bulk 1.55 μm InGaAsP/InP performed at constant temperature and carried out over a large range of carrier densities and a large spectral region. In addition, a polynomial model for the material gain is proposed that not only fits the experimental data well over the whole measured range but also shows stable convergence in simulation tools when carrier densities exceed the usual range. To get reliable parameters for the model we eliminated temperature effects arising from different current biases and performed material-gain measurements over the largest possible carrier density range. The material-gain model realized is used in semiconductor optical amplifier simulation tools.