Terahertz range quantum well infrared photodetector
Open Access
- 21 January 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (4), 475-477
- https://doi.org/10.1063/1.1641165
Abstract
We demonstrated a GaAs/AlGaAs-based far-infrared quantum well infrared photodetector at a wavelength of λ=84 μm. The relevant intersubband transition is slightly diagonal with a dipole matrix element of 3.0 nm. At 10 K, a responsivity of 8.6 mA/W and a detectivity of cm √Hz/W have been achieved; and successful detection up to a device temperature of 50 K has been observed. Being designed for zero bias operation, this device profits from a relatively low dark current and a good noise behavior.
Keywords
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