Experimental determination of the edge depletion width of ahe two-dimensional electron gas in GaAs/AlxGa1−xAs
- 12 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2), 110-112
- https://doi.org/10.1063/1.97869
Abstract
A new method based on one‐dimensional localization theory is introduced to determine the width of the two‐dimensional electron gas (2DEG) in narrow conducting channels of GaAs/AlxGa1−xAs heterojunctions. The edge depletion width of the 2DEG, measured by the difference between this width and the metallurgical width of the channel, is ∼0.5 μm±0.2 μm for a 2DEG density ns=1.5×1011/cm2.Keywords
This publication has 8 references indexed in Scilit:
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986
- Magnetoconductance of pinched silicon accumulation layersPhysical Review B, 1986
- Direct measurement of Thouless’s length-dependent conductance on a submicron length scalePhysical Review Letters, 1985
- Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance deviceApplied Physics Letters, 1985
- One-Dimensional Electron Localization and Superconducting Fluctuations in Narrow Aluminum WiresPhysical Review Letters, 1984
- Effects of electron-electron collisions with small energy transfers on quantum localisationJournal of Physics C: Solid State Physics, 1982
- Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion LayersPhysical Review Letters, 1982
- Quantitative analysis of weak localization in thin Mg films by magnetoresistance measurementsPhysical Review B, 1982