Tailoring the Optical Properties of Silicon Nanowire Arrays through Strain
- 23 July 2002
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 2 (8), 811-816
- https://doi.org/10.1021/nl0256098
Abstract
A unique supercritical fluid inclusion-phase technique has been developed to embed silicon nanowires, with size monodispersed diameters, within the pores of mesoporous silica hosts. These nanocomposite materials displayed quite intense room temperature ultraviolet and visible photoluminescence (PL), and the emission wavelength maximum was found to be dependent on the diameter of the encased nanowires. This previously unobserved wavelength dependence of the ultraviolet PL with decreasing nanowire size is explained using a continuum strain model resulting from confinement of the wires within the host lattice.Keywords
This publication has 32 references indexed in Scilit:
- Logic Gates and Computation from Assembled Nanowire Building BlocksScience, 2001
- Size effect in self-trapped exciton photoluminescence from-based nanoscale materialsPhysical Review B, 2001
- Efficient silicon light-emitting diodesNature, 2001
- The formation of dimensionally ordered germanium nanowires within mesoporous silicaChemical Physics Letters, 2001
- Direct Observation of Vapor−Liquid−Solid Nanowire GrowthJournal of the American Chemical Society, 2001
- The Formation of Dimensionally Ordered Silicon Nanowires within Mesoporous SilicaJournal of the American Chemical Society, 2000
- Control of Thickness and Orientation of Solution-Grown Silicon NanowiresScience, 2000
- Si nanowires synthesized by laser ablation of mixed SiC and SiO2 powdersChemical Physics Letters, 1999
- Nanocrystalline Ge filaments in the pores of a mesosilicatePhysical Review B, 1995
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990