The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and l

Abstract

It is shown that from the energy spectra of He ions backscattered from aluminum, recorded before and after anodic oxidation, the thickness of the oxide films and the positions of ion‐implanted foreign atoms within the films can be determined. Information on the composition and uniformity of the films is also obtained. The scope, limitations, and precision of the method are predictable and are discussed. As model experiments the behavior of ion‐implanted noble gases was studied. The results agree with previous work and can be interpreted to show that, as expected, both aluminum and oxygen are mobile during the oxidation. The behavior of ion‐implanted alkali metals and halogens was also studied. These species were found to be mobile during oxidation and behaved in a manner consistent with their expected ionic charges.