Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction

Abstract
Mo-based van der Waals heterojunction p–n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W–1, and an external quantum efficiency of 85% under blue-light illumination.
Funding Information
  • NRF (2014R1A2A1A01004815)
  • Nano-Materials Technology Development Program (2012M3A7B4034985)
  • Brain Korea 21 PLUS Program
  • Yonsei University (2014-22-0168)