Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction
Top Cited Papers
- 29 February 2016
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 28 (16), 3216-3222
- https://doi.org/10.1002/adma.201504090
Abstract
Mo-based van der Waals heterojunction p–n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 103, ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W–1, and an external quantum efficiency of 85% under blue-light illumination.Keywords
Funding Information
- NRF (2014R1A2A1A01004815)
- Nano-Materials Technology Development Program (2012M3A7B4034985)
- Brain Korea 21 PLUS Program
- Yonsei University (2014-22-0168)
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