Voltage-Induced Material Removal for Electrochemical Mechanical Planarization of Copper in Electrolytes Containing NO[sub 3][sup −], Glycine, and H[sub 2]O[sub 2]

Abstract

The main utility of electrochemical mechanical planarization (ECMP) is its low-pressure planarization capability, which is necessary for processing the new interconnect structures that contain mechanically fragile porous low permittivity dielectrics. Controlling the surface reactions (that is, controlling the voltage-induced material removal) in ECMP, however, requires a carefully designed combination of a number of electrochemical input variables (voltage activation program and electrolyte composition). In the present work, we study the main experimental factors for designing these parameters and present results for rectangular-voltage-pulse modulated dissolution of Cu in electrolytes containing , glycine, and hydrogen peroxide.