An Experimental Demonstration of GaN CMOS Technology
- 6 January 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 37 (3), 269-271
- https://doi.org/10.1109/led.2016.2515103
Abstract
This letter reports the first demonstration of gallium nitride (GaN) complementary metal-oxide-semi-conductor (CMOS) field-effect-transistor technology. Selective area epitaxy was employed to have both GaN N-channel MOSFET (NMOS) and P-channel MOSFET (PMOS) structures on the same wafer. An AlN/SiN dielectric stack grown by metal-organic chemical vapor deposition served as the gate oxide for both NMOS and PMOS, yielding enhancement-mode N- and P-channel with the electron mobility of 300 cm2/V-s and hole mobility of 20 cm2/V-s, respectively. Using the GaN CMOS technology, a functional inverter integrated circuit was fabricated and characterized.Keywords
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