Performance limits of graphene-ribbon field-effect transistors
- 2 January 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (4), 045301
- https://doi.org/10.1103/physrevb.77.045301
Abstract
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based transistors, reduces the importance of the specifics of the chemical bonding to the metallic electrodes in favor of the carbon-based part of device. The ultimate performance limits are here studied for various constriction and metal-ribbon contact models. In particular, we show that, even for poorly contacting metals, properly tailored constrictions can give promising values for both the on conductance and the subthreshold swing.Keywords
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