Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
- 1 July 2010
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 108 (1)
- https://doi.org/10.1063/1.3428442
Abstract
Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428442Keywords
This publication has 22 references indexed in Scilit:
- Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsJournal of Applied Physics, 2008
- DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNxSemiconductor Science and Technology, 2007
- Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistorsApplied Physics Letters, 2006
- Room temperature photo‐CVD SiO2 layers on AlGaN and AlGaN/GaN MOS‐HFETsPhysica Status Solidi (a), 2006
- Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistorsJournal of Electronic Materials, 2004
- Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal–insulator–semiconductor structuresJournal of Applied Physics, 2003
- Growth and passivation of AlGaN/GaN heterostructuresJournal of Crystal Growth, 2003
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structuresIEEE Transactions on Electron Devices, 2001
- Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor depositionJournal of Applied Physics, 2000
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000