Fabrication of Cd3As2nanowires by direct vapor–solid growth, and their infrared absorption properties

Abstract

In this work the authors introduce and provide details of the synthesis and spectral characterization of single-crystal nanowires in less common, high performance, group II-V semiconductors such as Cd(3)As(2). The growth mechanism critically deviates from a known vapor-liquid-solid one by being completely non-catalytic and involving only two states: vapor and solid. The resultant nanowires range from ∼50 to 200 nm in diameter and reach lengths up to tens of micrometers, with their fast growth direction being normal to the (112) crystal planes. According to infrared (IR) optical absorption measurements, the nanowires have several IR active direct type light absorption transitions at 0.11, 0.28 and 0.54 eV, suggestive of their possible utility in low cost optoelectronic devices and photodetectors operating in the long wavelength range of the electromagnetic spectrum.