Preparation and characterization of MOCVD bismuth telluride thin films
- 1 December 1998
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 194 (3-4), 336-341
- https://doi.org/10.1016/s0022-0248(98)00690-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- CRC Handbook of ThermoelectricsPublished by Informa UK Limited ,2018
- Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)Materials Science and Engineering B, 1998
- MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursorThin Solid Films, 1998
- Elaboration of Bi2Te3 by metal organic chemical vapor depositionThin Solid Films, 1997
- MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applicationsJournal of Crystal Growth, 1997
- Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenideJournal of Physics: Condensed Matter, 1997
- Evaluation of anisotropic thermoelectricity of sintered Bi2Te3 on the basis of the orientation distribution of crystallitesJournal of Applied Physics, 1994
- Properties of thin film thermoelectric materials: application to sensors using the Seebeck effectMaterials Science and Engineering B, 1992
- Preparation and properties of co-evaporated bismuth telluride [Bi2Te3] thin filmsSolid State Communications, 1985
- Crystal growth and orientation in sputtered films of bismuth telluridePhilosophical Magazine, 1964