Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

Abstract

The interface dipole and its role in the effective work function (EWF) modulation by Al incorporation are investigated. Our study shows that the interface dipole located at the high-$k/{\text{SiO}}_2$ interface causes an electrostatic potential difference across the metal/high-$k$ interface, which significantly shifts the band alignment between the metal and high-$k$ , consequently modulating the EWF. The electrochemical potential equalization and electrostatic potential methods are used to evaluate the interface dipole and its contribution. The calculated EWF modulation agrees with experimental data and can provide insight to the control of EWF in future $p\text{MOS}$ technology.